Abstract
The dislocation structure in InGaAs/GaAs strained-layer superlattices has been characterized by transmission electron microscopy. It is shown that most of the dislocations are confined to the buffer/strained-layer superlattice interface. We have also found that the strained-layer interface can be an effective barrier to dislocation propagation. Extended dislocations, which are potentially electrically active defects, are shown to exist in the strained-layer superlattice.
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