Abstract
The two basic tools for the monolithic integration of optoelectronic and electronic devices are described: Firstly, the growth of semi-insulating InP layers with ultra high resistivities of up to ϱ = 2 × 109 Ω cm. Secondly, the selective area growth resulting in planar surfaces. Undoped InP and InGaAs layers with background doping levels of around n = 5 × 1014cm−3 and electron mobilities of μ300/77K = 5000/150.000 cm2/V·s and μ300/77K = 11500/100000 cm2/V·s are achieved. Doping characteristics, especially for the first time manganese doping by MOVPE, are reported. Discrete double-heterostructure bipolar transistors have been fabricated with the highest current gain of β = 26 000 reported to date for this material system. InGaAsP/InP BH lasers with semi-insulating InP current-blocking layers and a planar surface have been realized. Threshold currents of 26 mA and extremely low capacitances of 3–5 pF promising excellent high frequency modulation characteristics have been achieved.
Published Version
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