Abstract
Fe doped semi-insulating InP layers have been grown by gas source MBE with a solid iron source. Structure as n-i-n, p-i-n and p-n-i-n were characterized by I( V) measurements and secondary ion mass spectroscopy profiling (SIMS). As shown by SIMS, uniform Fe doping and abrupt transitions are achieved for the different structures studied. Resistivities as high as 1.5×10 9 Ω cm are determined from I( V) curves for Fe concentrations in the 10 17 cm -3 range. Lasers with semi-insulating layers have been realized for the first time by gas source MBE. Preliminary results show power emission of 43 mW, without antireflecting coating, comparable to state-of-the-art characteristics.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
