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Abstract
The activation ratio of Fe atoms introduced in semi-insulating (SI) InP layers grown by liquid phase epitaxy (LPE) and metalorganic chemical vapor deposition (MOCVD) has been investigated, employing the current-voltage characteristics of n+-SI-n+ InP diodes and secondary ion mass spectroscopy analysis. The result indicates that most Fe atoms in LPE-grown SI layers are electrically active as deep acceptors; however, a large amount of unactivated Fe atoms are present in MOCVD-grown SI layers. This difference between the two kinds of Fe-doped SI layers can be attributed to the difference in the growth mechanisms of LPE and MOCVD.
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