Abstract

A hybrid growth technique has been used to fabricate high modulation bandwidth 1.3 µm InGaAsP buried crescent (BC) injection lasers. The technique involves a first growth of an Fe-doped semi-insulating (SI) InP current confinement layer by low pressure metal organic chemical vapor deposition (LPMOCVD) followed by a liquid phase epitaxy (LPE) regrowth. The lasers have room temperature threshold currents and differential quantum efficiencies ranging from 20 to 30 mA and 0.2 to 0.3 mW/mA/facet, respectively. A 3-dB modulation bandwidth of 5 GHz has been achieved.

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