Abstract
The degradation of the MOSFET inversion channel mobility due to generated interface-states was studied, generating the interface-states by Fowler-Nordheim injection. The inversion channel carrier mobility was directly related to the interface-state density and was not affected by the generated oxide charge. The mobility degradation due to the interface-states was in agreement with previous degradation data based on fixed interface charge by Sun and Plummer [1], provided the mobility was measured at the point of maximum transconductance, and only the charged fraction of the total interface-state spectrum under strong inversion conditions was included in the mobility model.
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