Monte Carlo simulation of Hall and magnetoresistance mobility in SOI devices

Abstract

We simulate the electron transport in the inversion layer of ultra-thin silicon-on-insulator devices in the presence of a perpendicular magnetic field. We compute and compare the Hall mobility, the magnetoresistance mobility and the low-field drift mobility. The Hall and magnetoresistance factors, which are essential in order to have precise information on the effective mobility from experimental Hall or magnetoresistance data, are computed for various ultrathin SOI structures and temperatures. The results show that Hall mobility and magnetoresistance mobility are modulated by the SOI size effects, in particular the subband splitting. Not only the Hall and magnetoresistance factors can be quite different from unity, but they also depend on the device geometry and operating conditions.