Monolayer Twisted Graphene-Based Schottky Transistor.

Ramin Ahmadi,Michal Petrů,Mohammad Taghi Ahmadi,Seyed Saeid Rahimian Koloor

doi:10.3390/ma14154109

Abstract

The outstanding properties of graphene-based components, such as twisted graphene, motivates nanoelectronic researchers to focus on their applications in device technology. Twisted graphene as a new class of graphene structures is investigated in the platform of transistor application in this research study. Therefore, its geometry effect on Schottky transistor operation is analyzed and the relationship between the diameter of twist and number of twists are explored. A metal–semiconductor–metal twisted graphene-based junction as a Schottky transistor is considered. By employing the dispersion relation and quantum tunneling the variation of transistor performance under channel length, the diameter of twisted graphene, and the number of twists deviation are studied. The results show that twisted graphene with a smaller diameter affects the efficiency of twisted graphene-based Schottky transistors. Additionally, as another main characteristic, the ID-VGS is explored, which indicates that the threshold voltage is increased by diameter and number of twists in this type of transistor.

Highlights

In the last decade, most efforts of nanotechnology researchers have been devoted to the study and characterization of electronic properties of graphene [1,2,3,4,5,6,7]
It can be seen that the drain current Materials 2021, 14, x FOR PEER REVrIEisWes substantially as the gate-source voltage is increased from 0.5 to 1 v which means that the gate-source voltage controls the current in the channel region (ID)
The effect of twisted graphene geometry on the threshold voltage of Schottky transistor indicates that the great number of twists and small values of diameters leads to a low threshold voltage of the transistor

Summary

Introduction

Most efforts of nanotechnology researchers have been devoted to the study and characterization of electronic properties of graphene [1,2,3,4,5,6,7]. A Schottky transistor based on twisted graphene is modeled.

Results

Conclusion