Contact Effect On Twisted Graphene Based Schottky Transistor

Abstract

Owing to the exceptional electrical properties of different one dimensional (1D) classifications of graphene structure such as graphene nanoribbon (GNR) and twisted graphene (TWG) led to a revolution in nanoelectronic researche and applications. Thus, these materials have been extensively explored in nanoelectronics science and materials. This paper is focused on GNR and TWG junction as metal-semiconductor-metal (MSM) in the form of a transistor. The wave vectors of TWG and GNR based on the geometrical effects are discussed. By considering 1D potential barrier at the junction of TWG as a semiconducting region and GNR as a metallic region, the transmission probability is calculated. Then, the I–V characteristics of GNR-TWG Schottky transistor based on quantum tunneling effect arepresented and discussed, as well. The performance of GNR-TWG Schottky transistor under variation of gate-source voltage, channel length, number of twists, width of GNR, and temperature are investigated. It is concluded that increment in number of twists and width of GNR lead to increasing the drain current and threshold voltage. Finally, comparison study with graphene nanoscroll (GNS) Schottky transistor, trilayer graphene nanoribbon (TGNR) Schottky transistor, and reported experimental data are performed and results represent that GNR-TWG Schottky transistor has larger drain current than these works.