Analytical modeling of graphene nanoribbon Schottky diodes

Abstract

This paper presents graphene nanoribbon (GNR) Schottky diode through an analytical approach. To achieve an analytical relation for channel current, first an analytical equation for potential distribution within the GNR is offered. Then by using the WKB approximation, transmission probability through Schottky barriers is derived. Finally the channel current is analytically achieved, which is a function of physical and electrical parameters including gate insulator thickness, Schottky barrier height, drain bias voltage, gate bias voltage, GNR width, and subband number. To get a rectification behavior of presented device, two different metals have been considered at the two ends of a p-type semiconducting GNR resulting in asymmetric contacts. The effect of different parameters such as gate bias voltage, GNR width, and contact metals on the rectification behavior is investigated. We demonstrate that the rectification characteristic, threshold voltage, reverse saturation current, and reverse turn-on voltage can be tuned through the use of these parameters. The derived analytical current well describes the rectifying behavior of presented GNR Schottky diode.