Abstract
InN hexagonal monocrystalline films were grown on yttria-stabilized zirconia (YSZ) (111) and Al2O3(0001) by the organometallic vapor phase epitaxy method with nitrogen activation in the electron cyclotron resonance discharge, supported by gyrotron radiation. The film growth rate reached 10 µm/h. In this paper, we present data on the morphology, structure, and photoluminescence properties of the grown films.
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