Abstract
Hexagonal indium nitride (InN) films on (111)- and (100)-oriented yttria-stabilized zirconia (YSZ) substrates and (0001)-oriented Al2O3 substrates have been grown for the first time at a rate of 1 μm/h by the method of metalorganic vapor-phase epitaxy with plasma-assisted nitrogen activation in an electron cyclotron resonance discharge generated by gyrotron radiation at low-temperature (350°C) growth. InN films grown without buffer layers possess a textured polycrystalline structure. Using an InN/GaN double buffer layer, single-crystalline InN films have been obtained on Al2O3(0001) substrates. Data on the morphology, structure, and photoluminescent properties of the obtained InN films are presented.
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