Modelling of chemical beam epitaxy

Abstract

The successful preparation of very high quality III–V semiconductor materials and heterostructure devices using chemical beam epitaxy (CBE) has stimulated a major interest in this technique recently. Consequently, a good understanding of the growth kinetics and chemistry occurring on the substrate surface is important in the further optimization of this technique. In this paper, we review our studies in this area employing the technique of reflection high energy electron diffraction oscillation, and a model that is proposed to explain the experimental results.