Abstract
Recent advances in chemical beam epitaxy have stimulated major interest in III–V semiconductor research and development. From the measurement of reflection high energy electron diffraction oscillation, we have earlier observed a unique GaAs growth rate behavior using triethylgallium and As dimers derived from arsine. The results lead us to postulate a surface chemical kinetics model in which only group III reaction mechanisms are considered. The present work provides detailed experimental evidences, especially in the low temperature range below 500°C, which clearly establish the nonlinear dependence of growth rate on temperature and group III flow rate. This behavior is indeed predicted by our chemical modeling. Furthermore, the importance of group V kinetics is discovered and its implication discussed.
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