Abstract
The terahertz SPICE FET model has been experimentally validated in Si CMOS and InGaAs HEMTs up to 4.5 THz and updated to account for parasitic gate fringing capacitance and parasitic source and drain resistance. The model is in good agreement with experimental data at low and high THz field intensities. We also show that introducing additional capacitances linking the drain and gate electrodes may lead to enhancement of the THz plasmonic detector response at lower THz frequencies. The simulation results of the plasmonic detector response to a single terahertz pulse are in good agreement with our measured data.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
