Abstract
Gate voltage-dependent parasitic source and drain resistances in MOSFETs have been modeled and extracted with a symmetric additional resistance method (sARM) for better description of asymmetric parasitic resistances which are induced by intentional and/or accidental variations in the layout and fabrication process. A good agreement of nonlinear models with the sARM has been verified with experimental data obtained from n-channel LDD MOSFETs.
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