Modeling the back gate effects of AlGaN/GaN HEMTs

Abstract

This letter reports the design and simulation of novel AlGaN/GaN double-gate high electron mobility transistors (DG HEMTs) featuring enhanced back gate-control of the two dimensional electron gas in AlGaN/GaN heterostructures. A comparison study was carried out to reveal the difference between the performance of the AlGaN/GaN DG HEMTs and single-gate devices. The results show that the DG GaN-HEMTs can potentially offer a higher transconductance gain and better immunity of the short channel effects of drain induced barrier lowering and subthreshold swing than traditional single-gate HEMTs.