Abstract
In recent years, double gate high electron mobility transistor (DGHEMT) have been introduced to provide better immunity to short channel effects which are inescapable with downscaling of the single gate devices due to fundamental limit on gate-to-channel thickness. Furthermore, in sub 100 nm regime, for lower device aspect ratio, channel thickness also becomes an important parameter affecting the device performance due to oncoming of short channel effects. In this paper, the effect of channel thickness in sub 100 nm DGHEMT and SGHEMT devices under OFF conditions has been studied using ATLAS device simulator. The analysis provides a valuable insight into the subthreshold behavior and presents a comparative picture of the two types of devices.
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