Abstract
The noise performance of InAlAs/InGaAs double-gate (DG) and standard high-electron-mobility transistors (HEMTs) is analyzed by means of an ensemble 2-D Monte Carlo simulator. The DG-HEMT is found to have a better noise behavior than the single-gate (SG) device. The results show a moderate decrease of the and noise parameters for the DG HEMT with respect to that of the SG device, since current fluctuations due to electrons injected into the buffer are eliminated. Moreover, the DG HEMT reveals a significantly lower extrinsic minimum noise figure and a higher associated gain , not only due to the better intrinsic performance but also to the lower contact resistances.
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