Modeling of threshold voltage, mobility, drain current and subthreshold leakage current in virgin and irradiated silicon-on-insulator fin-shaped field effect transistor device

Abstract

In this paper, an analytical model for the estimation of threshold voltage shift, mobility, drain current and subthreshold leakage current in virgin as well as irradiated nanoscale fin-shaped field effect transistor (FinFET) device has been presented. The generation of traps in the buried oxide (BOX) and the interface traps at the sidewall influence the characteristics of an irradiated FinFET device. A mobility model considering the influence of quantum mechanical structural confinement and the contribution of interface traps due to all the interfaces is reported in this paper. The modified definition of effective field is adopted to account for nonzero electric field at the back oxide interface of SOI (Silicon-on-Insulator) FinFET device. The results obtained on the basis of our models were compared and contrasted with reported experimental results. A close match was found that validate our analytical modeling approach.