Modeling for bridging faults in nMOS combinational circuits

Abstract

A transistor level model that fully describes the logical behavior of a circuit in the presence of bridging faults is presented for the nMOS combinational circuits. The proposed model is suitable for the circuits having static enhancement/depletion (E/D) load. Thus, the model can be applied to circuits like pseudo nMOS and CMOS non-threshold-logic (NTL). The model employs a logic transistor function (LTF) to examine the behavior of such circuits. The LTF model developed earlier for stuck faults in nMOS circuits is extended for bridging faults. Algorithms that were developed for the stuck faults in pseudo nMOS combinational circuits can be applied to generate the test vectors for bridging faults.