Abstract
Modeling and simulation of the silicon neuron- to-ISFET junction is presented. The neuronal electrical ac- tivity, extracellularly recorded by the ISFET, was simulated as a function of the neuro-electronic junction parameters such as the seal resistance, double-layer capacitance, and general adhesion conditions. This goal was achieved with a configuration consisting of "silicon neurons" i.e., assem- blies of CMOS circuits that mimic the generation of the equivalents of the ionic currents and of the action poten- tials of real (biological) neurons; "silicon synapses" whose performances simulate those of their biological counterpart; depletion-mode MOSFET-based ISFETs that simulate the signal recording devices; passive component-based circuits that model the neuro-electronic junction. The models of the neuron, synapse, coupling interface, and ISFET were imple- mented in HSPICE and used to simulate the behavior of the junction between stimulated neurons (described by the com- partmental model) and ISFETs.
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