Abstract
Accurate modeling of double heterojunction GaAlAs/GaAs I 2 L has been carried out using a hybrid device model corresponding to the real structure, which includes the effects of parasitic lateral diodes and extrinsic base resistance. The charge-control relations are given in terms of physically meaningful device parameters and are applicable at all current levels. The results of dynamic simulation are used to analyze the influence of technological parameters and to discuss optimization criteria. The theoretical analysis indicates that a structure designed with 1 μm design rules and a fan-out of one should present a limit propagation time in the order of 100 ps (at a power consumption of 100 μW) and a factor of merit about 2 fJ at 1 μW.
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