Abstract
Microtwinning was studied using TEM in semi-insulating undoped GaAs and p-type GaAs (Zn, 1018 cm−3-In, 1020 cm−3). The GaAs crystals were deformed at room temperature by uniaxial compression and under hydrostatic pressure. The microtwins are produced by the gliding of Bδ partial dislocations. The effects of doping on the mobility of these dislocations was determined by a careful study of their orientations in the two types of crystals. The lowest mobility is observed for the 30°(β) character in semi-insulating GaAs and for the 30°(α) character in p-type GaAs.
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