Abstract
Abstract Single intrinsic stacking faults in semi-insulating undoped GaAs have been studied by transmission electron microscopy. The crystals were deformed at room temperature by uniaxial compression and under hydrostatic pressure. It is shown that the stacking faults are produced by the dissociation of 60°(β) dislocations under very high stress (τ≃0·75 GPa). The partial dislocations bounding the stacking faults are systematically 30°(β) in character. These observations are consistent with the classification of mobilities of partial dislocations that had been previously established when studying deformation microtwins in the same material: 30°(β)<30°(α) <90°(α or β).
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
