Millimeter-wave low-noise HEMT amplifiers

Abstract

Listen

Translate article

Short-gate-length high-electron-mobility transistors (HEMTs) are reported that have exhibited state-of-the-art low-noise performance at millimeter-wave frequencies; minimum noise figure of 1.2 dB at 32 GHz and 1.8 dB at 60 GHz from 0.25- mu m HEMTs. At Ka-band, a two-stage low-noise amplifier has demonstrated an average noise figure of 2 dB from 26.5 GHz to 37 GHz with a gain of 17 dB at 32 GHz. At V-band, a two-stage amplifier yielded a noise figure of 3.2 dB at 61 GHz with flat gain 12.7*0.5 dB from 59 GHz to 65 GHz. These devices are described and the potential for their future improvement is discussed. >