Abstract
In this study, a two-stage low-noise amplifier (LNA) was developed in which the noise-matching network of a high-pass filter (HPF) structure is applied to both stages. As the HPF noise matching network is used in both stages, the noise figure of the proposed LNA can be reduced compared to that of the conventional LNA. In particular, the noise figure is improved in the high-frequency region. To verify this development, a two-stage common-source LNA was implemented using 0.18-lm bulk complementary metal oxide semiconductor technology. The fabricated LNA achieved an average noise figure of 2.6 dB (minimum noise figure of 2.23 dB at 3.95 GHz) and a peak gain of 14.19 dB. In addition, the LNA has an input 1-dB compression point (IP1dB) of.12 dBm and a third-order input intercept point (IIP3) of +2.0 dBm at 3.5 GHz, consumes 16 mA with a 0.9 V supply, and has an area of 0.7 mm2.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callMore From: IEEE Transactions on Circuits and Systems II: Express Briefs
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
