State-of-the-art low noise performance of 94 GHz monolithic amplifiers using 0.1 mu m InGaAs/GaAs pseudomorphic HEMT technology

Abstract

W-band monolithic one- and two-stage low-noise amplifiers (LNAs) using 0.1- mu m T-gate InGaAs/GaAs pseudomorphic HEMT (high electron mobility transistor) technology have been developed which demonstrate state-of-the-art low-noise performance at this frequency. At room temperature, the one-stage amplifier has a measured noise figure of 3.5 dB with an associated small signal gain of 5.3 dB and the two-stage amplifier has a measured 4.7-dB noise figure with 11-dB associated gain at 94 GHz. These are the best noise performances for W-band monolithic LNAs to date. The success of this development is ascribed to excellent device characteristics and a rigorous MMIC (monolithic microwave integrated circuit) design/analysis methodology. >