Abstract
The Co2FeSi films are deposited on Si (100) substrates by an oblique sputtering method at ambient temperature. It is revealed that the microwave ferromagnetic properties of Co2FeSi films are sensitive to sample position and sputtering power. It is exciting that the as-deposited films without any magnetic annealing exhibit high in-plane uniaxial anisotropy fields in a range of 200 Oe–330 Oe (1 Oe = 79.5775 Am−1), and low coercivities in a range of 5 Oe–28 Oe. As a result, high self-biased ferromagnetic resonance frequency up to 4.75 GHz is achieved in as-deposited oblique sputtered films. These results indicate that Co2FeSi Heusler alloy films are promising in practical applications of RF/microwave devices.
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