Abstract
A series of (Co2FeSi)1-x(Al2O3)xHeusler alloy films with various Al2O3-doping were prepared by an oblique sputtering method. It is exciting that the as-deposited films exhibit a very high in-plane uniaxial magnetic anisotropy (UMA) field up to 360 Oe and low coercivity of 12 Oe. Consequently, a very high self-bias ferromagnetic resonance frequency in excess of 5.02 GHz was obtained in as-deposited Co2FeSi films without any annealing. The good microwave ferromagnetic performances and the integrated circuits compatible fabrication process of Co2FeSi films make possible application in RF/microwave devices.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
