Abstract
In this paper, a simple non-linear analytical charge control model for the DC and microwave characteristics of AlGaN/GaN MODFET is presented. The effect of parasitic resistances R is also incorporated. The model has also been extended to obtain the expressions for transconductance, drain conductance and cut-off frequency of the device. The model predicts a high transconductance of 502.6mA/mm at 1Vof gate bias and a maximum cut-off frequency of 22.5GHz for a 50nm device gate length, which is important in realizing the device for microwave applications. The extrinsic and intrinsic characteristics show close agreement with the published results proving the validity of the model.
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