Abstract
AbstractA simple and compact non‐linear analytical charge control model for the AlmGa1−mN/GaN MODFET is developed. This model incorporates the effect of parasitic resistances Rs and Rd, fermi potential (EF)‐variation with sheet‐carrier concentration ns, and the charge induced in 2D electron gases (2‐DEG) due to the highly dominant effects of spontaneous and piezoelectric polarization at the heterojunction of the MODFET. Extrinsic current‐voltage characteristics show good agreement with experimental data and closed‐form expressions for transconductance, drain conductance, and unit current‐gain cutoff frequency are obtained. © 2003 Wiley Periodicals, Inc. Microwave Opt Technol Lett 38: 371–378, 2003; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.11064
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