Abstract
A simple non-linear charge control model proposed by DasGupta et al. for the AlGaAs/GaAs based high electron mobility transistors (HEMTs) is applied for AlGaAs/InGaAs/GaAs based pseudomorphic HEMTs. This non-linear charge control model is used to calculate the I– V characteristics of pHEMTs. As electron velocity is one of the important parameters which determine the I– V characteristics of devices, a best analytical expression is used for modeling the I– V characteristics of HEMTs. The I– V characteristics obtained from the present model are compared with the experimental I– V data of the 0.25 μm gate length Al 0.25Ga 0.75As/In 0.2Ga 0.8As/GaAs pHEMTs fabricated in our laboratory, and show good agreement. The present model, being analytical and simple, can be implemented in circuit simulator for design and analysis of circuits based on AlGaAs/InGaAs/GaAs based pHEMTs.
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