Abstract
An improved DC model for a GaAs MODFET (modulation-doped field-effect transistor) is developed which includes a very simple nonlinear charge control model for the two-dimensional electron gas density. The MODFET is modeled as a lossy transmission line for microwave-frequency analysis. The model predictions show a good agreement with experimental results on a 0.3- mu m GaAs MODFET for both the DC characteristics and the 1-26-GHz frequency range. >
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