Analysis of Temperature Model on Device Characteristics for AlGaN/GaN MODFET for High Power Electronics

Abstract

An investigation of the temperature model of a 1 mum gate AlGaN/GaN n-type modulation-doped field effect transistor (MODFET) is presented. The investigated temperature range is from 100 degK-600 degK. The critical parameters for dc characteristics are the maximum drain current (IDmax), the threshold voltage (Vth), and the peak dc transconductance (gm). The small signal microwave parameters have been evaluated to determine the unity current gain cut-off frequency (fT). High fT (10-70 GHz) values and high current levels ( ~450 mA/mm) are achieved for a 1 mum AlGaN/GaN MODFET