Abstract
The impact of high temperature rapid thermal annealing (RTA) on the mode of operation of AlGaN/GaN modulation doped field effect transistors (MODFETs) is reported. It is observed that annealing at high temperatures is capable of turning the normally depletion-mode (D-mode) characteristics of an AlGaN/GaN MODFET, towards that of an enhancement-mode (E-mode). This change is shown to be partly reversible through UV illumination. These results support the arguments on the extensive role of deep surface states on the operation of AlGaN/GaN MODFETs. According to this variation of characteristics, fabrication and characterization of close to E-mode AlGaN/GaN MODFETs are reported, using MBE grown material on sapphire. The devices demonstrate maximum extrinsic gate transconductance of 180 mS/mm. Unity current gain cutoff frequency ( f T) of 5 GHz and maximum oscillation frequency ( f max) of 14 GHz were measured.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.