Abstract
In order to measure the piezoelectric properties of the Hydroxyapatite (HAp) films, we have fabricated Cu/HAp/Ti or Cu/HAp/Pt structure. At first, a 1.5 m thick HAp was deposited on a Ti or Pt substrate using the KrF Pulsed Laser Deposition (PLD) method. After the HAp deposition, the HAp film was crystallized by post-annealing in nitrogen gas atmosphere and cooled slowly in an electric furnace. Then, a Cu top electrode sheet was attached on HAp film. Finally, one end of the Cu/HAp/Ti or Cu/HAp/Pt structure was clamped to compose a vibrating cantilever beam. Piezoelectric coefficients were estimated by output voltage responses of HAp films measured by a operational amplifier circuit when the Cu/HAp/Ti or Cu/HAp/Pt beam was excited by a mini-shaker at the first natural frequency of the beam. The results showed the piezoelectricity of the artificially synthesized HAp films.
Highlights
It has been well known that bone has piezoelectric properties and it has been said that this properties affect the process of growth and the remodeling of bone
In order to measure the piezoelectric properties, HAp thin films wSere deposited on a Ti or Pt substrate using Pulsed Laser Deposition (PLD) method, anSd piezoelectric properties of the HAp film were estimated by measuring vibration responses of the mechanical strains and electrical voltages of the HAp structure simultaneously
Thin HAp flims were deposited by using PLD method to compose Cu/HAp/Ti or Cu/HAp/Pt structure and were crystallized by postannealing process
Summary
It has been well known that bone has piezoelectric properties and it has been said that this properties affect the process of growth and the remodeling of bone. These piezoelectric properties of the bone was considered to be caused by the shift of the center of symmetry of the positive and negative electrical charge due to the strain of the collagen fibers included in the bone. In the artificially synthesized HAp, there were no longer any perfect center of symmetry of crystal, and the piezoelectricity is considered to be caused by the shift of the center of symmetry of the positive and negative electrical charge due to the strain of the HAp itsef. In order to measure the piezoelectric properties, HAp thin films wSere deposited on a Ti or Pt substrate using PLD method, anSd piezoelectric properties of the HAp film were estimated by measuring vibration responses of the mechanical strains and electrical voltages of the HAp structure simultaneously
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