Abstract
We examine nonrecombination active minority-carrier trapping centers in crystalline silicon using a lock-in infrared camera technique. Application of a simple trapping model to the injection-dependent lifetime data obtained from the infrared emission signal results in high-resolution mappings (spatial resolution=170μm) of the trap density and the energy level. Measurements on Czochralski-grown silicon wafers show striation-related inhomogeneities of the trap density and a very homogeneous distribution of energy levels.
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