Abstract
The random telegraph noise in a gate leakage current in an accumulation mode has been studied to characterize slow oxide traps at nMOSFET devices having a TiN/HfO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> /SiO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> gate stack. New equations for the trap's vertical location and energy level were derived by means of the relation between the trap's energy and Fermi levels in the accumulation mode. Through our analysis in both the accumulation and inversion modes, we found that the measurement in the accumulation mode is complementary to that in the inversion mode in order to assess the traps within a wide range of energy levels.
Sign-in/Register to access full text options 
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
