Abstract
The authors report experimental data and modeling results for reflection microbeam x-ray topographs from a Si substrate strained by an overlying pseudomorphic SiGe film edge. The diffracted x-ray intensity from the Si substrate is strongly asymmetric as a function of distance from the film edge. A model of the diffracted intensity based on the classical Ewald–von Laue dynamical diffraction theory for an antisymmetric strain distribution indicates that the asymmetry in the diffracted beam profile is only due to the scattering process; individual intensity maxima in the intensity profile cannot be uniquely ascribed to individual features in the local strain distribution.
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