Abstract
Titanium aluminide thin films are deposited on glassy carbon substrates by the coaxial vacuum arc deposition process. A rod-shaped Ti–Al alloy is employed as the evaporation source. In our vacuum arc system, because the spatial position of plasma on the surface of the evaporation source can be controlled by pulsed arc discharge, the thickness of the Ti–Al film can be controlled at nanometer scale. Amorphous stoichiometric Ti–Al films are synthesized from one Ti–Al alloy target at room temperature by changing the number of pulses of the arc discharge. Multilayered Ti and Al films could also be fabricated by changing the target and the number of pulsed arc discharges.
Sign-in/Register to access full text options 
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
