Abstract
TiAl and TiAlN thin films are deposited on glassy carbon and Si substrates by the pulsed cathodic arc deposition process. In our pulsed cathodic arc system, because the spatial position of plasma on the surface of the evaporation source can be controlled by pulsed arc discharge, the thickness of the TiAl and TiAlN films can be controlled at nanometer scale. Amorphous stoichiometric Ti-Al films are synthesized from one Ti-Al alloy target at room temperature by changing the number of pulses of the arc discharge.
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