Abstract
The angled reactive-ion-etching (RIE) technique utilising a TiO2 mask and Cl2-Ar gas is successfully applied to facet mirror fabrication of 1.3 μm InGaAsP/InP doubly buried-heterostructure (DBH) lasers. A typical CW operation threshold current is 22 mA at 25°C, and light output power from one facet exceeds 20 mW. The result of the preliminary aging test is also presented.
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