Abstract
InGaAsP/InP laser structures with both facets etched are successfully fabricated by angled reactive ion etching (RIE) utilising a TiO2 mask and Cl2-Ar gas. Typical CW threshold current ranges from 20 to 30 mA at 25°C, and light output power from one facet exceeds 25 mW. Results of the aging test at 50°C and 100 mA show no serious degradation for 3200 h.
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