Abstract
In this article, we demonstrate a simple and low-cost method to fabricate the strained multiquantum-well buried-heterostructure (BH) laser diodes (LDs) by using the single-step metallorganic-chemical-vapor-deposition (MOCVD) regrowth and self-aligned technique. The active region is buried by the intrinsic layer which is used as the current-blocking layer as well as the electrical and optical confinement layer. The BH LDs have a calculated internal quantum efficiency of 81% and an internal loss of . The fabricated as-cleaved BH LDs exhibit a threshold current of , a maximum light output power of at , a maximum operating temperature of , and a characteristic temperature of in . The BH LDs with an as-cleaved front facet and a high reflectivity coating applied to the rear facet can increase the maximum operation temperature up to and have a light output power exceeding at and . The frequency at a bias current of is 8.0, 6.5, and at 30, 60, and , respectively. Besides, the modulation bandwidth can be extended as far as at and . These results confirm that BH LDs have the potential capacity for high-speed fiber optic applications.
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