Low-Temperature Growth of ZnS by Photoassisted Metalorganic Chemical Vapor Deposition

Abstract

Low-temperature growth of ZnS on quartz and GaAs substrates has been carried out by photoassisted metal-organic chemical vapor deposition (MOCVD) using an ArF excimer laser. Hydrocarbon incorporation in the films, however, makes it difficult to perform crystal growth at temperatures of less than 400° C. This hydrocarbon incorporation was prevented by decomposition of metalorganics on the substrate by simultaneous irradiation of an ultrahigh-pressure mercury lamp on the substrate surface. Using this technique, crystal growth of ZnS was achieved at growth temperatures in the range of 100–150° C.