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Abstract
The growth of ZnS and Zn 1− x Mg x S alloys on GaAs and GaP substrates oriented 2° off the (1 0 0) in the [1 1 0] direction, using metalorganic chemical vapor deposition, is reported. The photoluminescence of high-quality ZnS samples is presented. Strain effects are considered to explain the valence band splitting, and the energy shift between ZnS/GaAs and ZnS/GaP photoluminescence spectra. For Zn 1− x Mg x S alloys, the composition as well as the optical and structural properties are investigated as a function of the growth parameters.
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