Abstract
Sol-gel derived Pb(Zr,Ti)O3 capacitors were prepared by low-pressure annealing and the two-step annealing techniques. Well-saturated D–E hysteresis was obtained at 650°C with low-pressure rapid thermal annealing. The low-pressure first anneal lowered the crystallization temperature of sol-gel-derived Pb(Zr,Ti)O3 thin films. Highly reliable and low-voltage operation Pb(Zr,Ti)O3 capacitors were obtained using a two-step annealing techniques under low-pressure at 550°C.
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