Abstract
The characteristics of a sol-gel derived Pb(Zr, TiO)3 thin-film capacitor with polycrystalline SrRuO3 electrodes deposited by reactive sputtering were evaluated. A single perovskite phase Pb(Zr, Ti)O3 film with columnar grain structure was formed on SrRuO3 substrates since nucleation of Pb(Zr, Ti)O3 took place at the interface with SrRuO3. A Pb(Zr, Ti)O3 capacitor with top and bottom SrRuO3 electrodes showed excellent electrical properties. Leakage current densities were around 1×10-7 A/cm2 at ±5.0 V. The capacitor exhibited good reversibility at an applied voltage of 3.0 V. Remanent polarization density for 3.0 V was 14.3 µc/cm2. Degradation of remanent polarization density was not observed up to switching cycles of 1×1010. Polycrystalline SrRuO3 thin film is expected to be a good candidate for the electrode material of Pb(Zr, Ti)O3 capacitors.
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