Abstract
The low temperature metal organic decomposition techniques of ferroelectric bismuth titanate (BIT) thin films were investigated. BIT was found to be crystallized by rapid thermal processing at 450 °C. The stoichiometric Bi4Ti3O12 sample exhibited (117) orientation, while the Bi4.8Ti3O13.2 sample, with 20% excess bismuth, possessed a/b axes orientation with (117) component. Pt/Bi4.8Ti3O13.2/Pt ferroelectric capacitors were fabricated with temperature confined below 450 °C. The saturated 2Pr value was 31.1 μC/cm2. Such method is valuable for ferroelectric memories at 65 nm technology node and beyond because low temperature processes are required for the stability of interconnect material nickel silicide.
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